44 citations · 199 across the 10 of their papers we have counts for
10 papers
Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
Patrick Fiorenza, Marco Zignale, Marco Camalleri +5
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are i…
Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
P. Fiorenza, F. Cordiano, S. M. Alessandrino +6
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti +6
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. Th…
Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo +4
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the cha…
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +7
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed dev…