44 citations · 165 across the 6 of their papers we have counts for
6 papers
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +7
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed dev…
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs
Patrick Fiorenza, Filippo Giannazzo, Mario Saggio +1
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO/4H-SiC system over the whole 4H-SiC band gap. The tempe…
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra +7
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for un…
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
S. Rascunà, P. Badalà, C. Tringali +8
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…