44 citations · 199 across the 10 of their papers we have counts for
4 papers · 2 filters
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +7
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed dev…
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs
Patrick Fiorenza, Filippo Giannazzo, Mario Saggio +1
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO/4H-SiC system over the whole 4H-SiC band gap. The tempe…
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra +7
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for un…