78 citations · 1.4k across the 195 of their papers we have counts for
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Topological Hall Effect Induced by Chiral Spin Textures at the Ferroelectric/Ferromagnetic Interface
Jingkuan Xiao, Yaqing Han, Jianfeng Guo +25
Chiral spin textures, largely driven by the Dzyaloshinskii-Moriya interaction, offer significant potential for next-generation computing technologies due to their chirality and top…
Layer-parity-dependent interfacial coupling in NbCl/graphene van der Waals heterostructures
Hansheng Xu, Yuchen Gao, Xinyue Huang +8
Strongly correlated two-dimensional systems provide compelling platforms for investigating exotic quantum phenomena. Niobium chloride (NbCl), a single-band Mott insulator,…
Activated Migration of Localized Ligand-Field Excitons in Atomically Thin CrCl3
Hyesun Kim, Renlong Liu, Sangho Yoon +6
Two-dimensional crystals with densely packed atoms exhibit a range of emerging properties, particularly a wide variety of excitonic behaviors. Thickness-variable layered chromium t…
Topological spin-texture transitions in van der Waals magnets revealed by X-ray Fourier transform holography
Sourav Chowdhury, Soumyaranjan Dash, Michael Schneider +14
Nontrivial topological spin-textures, such as skyrmions, merons, bimerons, and skyrmioniums, are envisioned as robust building blocks for future memory and logic devices. Controlla…
van der Waals Nanoreactors
Zhaoyi Joy Zheng, Haosen Guan, Danrui Ni +11
Advancing the chemical synthesis of crystals is important for both fundamental research and practical applications of quantum materials. While established bulk-phase and thin-film…
Gate tuning of coupled electronic and structural phase transition in atomically thin TaNiSe
Keyu Wei, Yixuan Luo, Kenji Watanabe +3
Realizing an excitonic insulator phase from narrow-gap semiconductors remains challenging, as unambiguous experimental signatures are difficult to establish. TaNiSe has bee…
Moire-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics
Arup Singha, Shaili Sett, Kenji Watanabe +3
Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in fer…
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe layers
Maksymilian Kuna, Mateusz Raczyński, Julia Kucharek +5
We report an experimental study of the magnetic-field dependence of the optically pumped valley polarization in an epitaxial tungsten diselenide (WSe) monolayer grown by molecu…
2D Excitonics with Atomically Thin Lateral Heterostructures
S. Shradha, R. Rosati, H. Lamsaadi +18
Semiconducting transition metal dichalcogenides (TMDs), such as MoSe and WSe, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more T…
Twist-tuned exchange and hysteresis in a bilayer van der Waals magnet
Priyanka Mondal, Sonu Verma, Wenze Lan +9
Moiré superlattices in twisted bilayers enable profound reconstructions of the electronic bandstructure, giving rise to correlated states with remarkable tunability. Extending this…
Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe
Masato Sakano, Shunsuke Akatsuka, Takato Yamamoto +19
Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal proper…
Growth of few-layer molecular crystals of PTCDI on hexagonal boron nitride by microspacing air-gap sublimation
Nils LeCoutre, Tolibjon Abdurakhmonov, Paul Weinbrenner +6
Extended two-dimensional (2D) crystals of dye molecules adsorbed on 2D material substrates like boron nitride have recently become a subject of intense study, with potential applic…
Ferroelectric switching of interfacial dipoles in -RuCl/graphene heterostructure
Soyun Kim, Jo Hyun Yun, Junsik Choe +8
We demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/-RuCl heterostructures, stabilized purely by interfacial charge transfer across an atomical…
The interplay of ferroelectricity and magneto-transport in non-magnetic moiré superlattices
Siqi Jiang, Renjun Du, Jiawei Jiang +20
The coupling of ferroelectricity and magnetic order provides rich tunability for engineering material properties and demonstrates great potential for uncovering novel quantum pheno…
Magnetic Correlation Spectroscopy in CrSBr
Lukas Krelle, Ryan Tan, Daria Markina +8
CrSBr is an air-stable magnetic van der Waals semiconductor with strong magnetic anisotropy, where the interaction of excitons with the magnetic order enables the optical identific…
Spin valve effect in junctions with a single ferromagnet
Fengrui Yao, Volodymyr Multian, Kenji Watanabe +3
Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magn…
Extremely high excitonic -factors in 2D crystals by alloy-induced admixing of band states
Katarzyna Olkowska-Pucko, Tomasz Woźniak, Elena Blundo +24
Monolayers (MLs) of semiconducting transition metal dichalcogenides (\mbox{S-TMDs}) emit light very efficiently and display rich spin-valley physics, with gyromagnetic (-) facto…
Charge state tuning of spin defects in hexagonal boron nitride
Jules Fraunié, Tristan Clua-Provost, Sébastien Roux +14
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to…
Direct measurement of the longitudinal exciton dispersion in hBN by resonant inelastic x-ray scattering
Alessandro Nicolaou, Kari Ruotsalainen, Laura Susana +7
We report resonant inelastic X-ray scattering (RIXS) measurements on the prototypical hexagonal boron nitride hBN layered compound. The RIXS results at the B and N K edges have bee…
Optical detection of the sliding ferroelectric switching in hBN with a WSe2 monolayer
Sébastien Roux, Jules Fraunié, Kenji Watanabe +3
When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B-N bonds.…
Moire magnetism in CrBr3 multilayers emerging from differential strain
Fengrui Yao, Dario Rossi, Ivo A. Gabrovski +8
Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twist…
Excitonic signatures of ferroelectric order in parallel-stacked MoS
Swarup Deb, Johannes Krause, Paulo E. Faria Junior +6
Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers.…
Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
Taoufiq Ouaj, Christophe Arnold, Jon Azpeitia +25
We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these…
Magnetic proximity coupling to defects in a two-dimensional semiconductor
Muhammad Hassan Shaikh, Matthew Whalen, Dai Q. Ho +8
The ultrathin structure and efficient spin dynamics of two-dimensional (2D) antiferromagnetic (AFM) materials hold unprecedented opportunities for ultrafast memory devices, artific…