Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling

Yuba Poudel, Jagoda Slawinska, Priya Gopal +6

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize…