activity
20142025
most citedNano-Cross-Junction Effect on Phonon Transport in Silicon-Nanowire-Cages

131 citations · 641 across the 21 of their papers we have counts for

collaborators
Showing 2019Show all

5 papers · 1 filter

physics.app-ph2019★ 1 cited

Phonon Transport within Periodic Porous Structures -- From Classical Phonon Size Effects to Wave Effects

Yue Xiao, Qiyu Chen, Dengke Ma +2

Tailoring thermal properties with nanostructured materials can be of vital importance for many applications. Generally classical phonon size effects are employed to reduce the ther…

cond-mat.mes-hall2019★ 24 cited

Cross interface model for the thermal transport across interface between overlapped boron nitride nanoribbons

Wentao Feng, Xiaoxiang Yu, Yue Wang +4

The application of low-dimensional materials for heat dissipation requires a comprehensive understanding of the thermal transport at the cross interface, which widely exists in var…

cond-mat.mes-hall2019★ 1 cited

Thermal conductivity of molybdenum disulfide nanotube from molecular dynamics simulations

Han Meng, Dengke Ma, Xiaoxiang Yu +3

Single layer molybdenum disulfide (SLMoS2), a semiconductor possesses intrinsic bandgap and high electron mobility, has attracted great attention due to its unique electronic, opti…

cond-mat.mes-hall2019

Violation of Fourier's law in homogeneous systems

Chuang Zhang, Dengke Ma, Manyu Shang +5

Hotspot is a ubiquitous phenomenon in microdevices/chips. In homogeneous nanoscale graphene disk with a hotspot, a graded thermal conductivity is observed previously even when the…

physics.app-ph2019★ 54 cited

Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface

Shichen Deng, Chengdi Xiao, Jiale Yuan +4

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimenta…