Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface

Abstract

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO2 was characterized by using transmission electron microscopy and X-ray diffraction. The TBR is measured as 8.11*10-8 m2K/W by 3-omega method. Furthermore, the diffuse mismatch model was employed to predict the TBR of different interfaces which is in good agreement with measurements. Heat transport behavior based on phonon scattering perspective was also discussed to understand the variations of TBR across different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3 omega procedure, as 1.42 W/mK at room temperature. It is believed the presented results could provide useful insights on the thermal management and heat dissipation for SiC devices.

References in corpus (7)

• Heat transport in silicon from first principles calculations
• Nano-Cross-Junction Effect on Phonon Transport in Silicon-Nanowire-Cages
• Thermal Contact Resistance Across Nanoscale Silicon Dioxide and Silicon Interface
• Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations
• Phonon Coherence and Its Effect on Thermal Conductivity of Nanostructures
• Ab initio studies of phonon softening and high pressure phase transitions of alpha-quartz SiO2
• Phonon Eigenspectrum-Based Formulation of the Atomistic Green's Function Method

Cited by in corpus (2)

• Three-Sensor 3ω-2ω Method for the Simultaneous Measurement of Thermal Conductivity and Thermal Boundary Resistance in Film-on-Substrate Heterostructures
• Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs