62 citations · 91 across the 4 of their papers we have counts for
13 papers
Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…
A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
Farzan Jazaeri, Arnout Beckers, Armin Tajalli +1
Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts…
Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
Amin Rassekh, Farzan Jazaeri, Morteza Fathipour +1
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. In…
An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement
Danial Shafizade, Majid Shalchian, Farzan Jazaeri
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D…
Cryogenic MOSFET Threshold Voltage Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisso…