178 citations · 676 across the 16 of their papers we have counts for
17 papers
Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
Generalized Boltzmann relations in semiconductors including band tails
Arnout Beckers, Dominique Beckers, Farzan Jazaeri +2
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponen…
Inflection Phenomenon in Cryogenic MOSFET Behavior
Arnout Beckers, Farzan Jazaeri, Christian Enz
This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of…
Non-Hysteretic Condition in Negative Capacitance Junctionless FETs
Amin Rassekh, Farzan Jazaeri, Jean-Michel Sallese
This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, w…
Charge-based Modeling of Ultra Narrow Cylindrical Nanowire FETs
Danial Shafizade, Majid Shalchian, Farzan Jazaeri
This brief proposes an analytical approach to model the dc electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistor (JLNW-FET). The model i…
Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…
A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
Farzan Jazaeri, Arnout Beckers, Armin Tajalli +1
Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts…
Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
Amin Rassekh, Farzan Jazaeri, Morteza Fathipour +1
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. In…
An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement
Danial Shafizade, Majid Shalchian, Farzan Jazaeri
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D…
Cryogenic MOSFET Threshold Voltage Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisso…
Revised theoretical limit of subthreshold swing in field-effect transistors
Arnout Beckers, Farzan Jazaeri, Christian Enz
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temp…
Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena…
Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and…
Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement
Majid Shalchian, Farzan Jazaeri, Jean-Michel Sallese
This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density.…
Cryogenic MOS Transistor Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to…
Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Andrea Ruffino +3
This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundament…
Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors
Ali Saeidi, Farzan Jazaeri, Igor Stolichnov +2
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10…