4 citations · 5 across the 3 of their papers we have counts for
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Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement
Danial Shafizade, Majid Shalchian, Farzan Jazaeri
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D…
Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement
Majid Shalchian, Farzan Jazaeri, Jean-Michel Sallese
This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density.…