activity
20182024
most citedCharge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

33 citations · 51 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2024★ 1 cited

Simplified EPFL GaN HEMT Model

Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…

cs.NE2021★ 4 cited

Spike time displacement based error backpropagation in convolutional spiking neural networks

Maryam Mirsadeghi, Majid Shalchian, Saeed Reza Kheradpisheh +1

We recently proposed the STiDi-BP algorithm, which avoids backward recursive gradient computation, for training multi-layer spiking neural networks (SNNs) with single-spike-based t…

physics.app-ph2020★ 13 cited

Charge-based Modeling of Ultra Narrow Cylindrical Nanowire FETs

Danial Shafizade, Majid Shalchian, Farzan Jazaeri

This brief proposes an analytical approach to model the dc electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistor (JLNW-FET). The model i…

physics.app-ph2019

An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement

Danial Shafizade, Majid Shalchian, Farzan Jazaeri

In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D…

physics.app-ph2018★ 33 cited

Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

Majid Shalchian, Farzan Jazaeri, Jean-Michel Sallese

This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density.…