28 citations · 141 across the 14 of their papers we have counts for
3 papers · 1 filter
Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior
Joao H. Quintino Palhares, Yann Beilliard, Fabien Alibart +5
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-d…
AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators
Tony Liu, Amirali Amirsoleimani, Fabien Alibart +3
An adaptive inference method for crossbar (AIDX) is presented based on an optimization scheme for adjusting the duration and amplitude of input voltage pulses. AIDX minimizes the l…
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
Yann Beilliard, François Paquette, Frédéric Brousseau +3
This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhi…