28 citations · 98 across the 7 of their papers we have counts for
7 papers
The effect of direct electron beam patterning on the water uptake and ionic conductivity of Nafion thin films
Ky V. Nguyen, Jan G. Gluschke, A. Bernardus Mostert +12
We report the effect of electron-beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of x-ray photoelectron spectroscopy, quartz crystal…
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
J. G. Gluschke, J. Seidl, R. W. Lyttleton +9
A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monoli…
Post-growth shaping and transport anisotropy in 2D InAs nanofins
J. Seidl, J. G. Gluschke, X. Yuan +4
We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabr…
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
J. G. Gluschke, J. Seidl, H. H. Tan +3
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characteri…
Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
J. Seidl, J. G. Gluschke, X. Yuan +6
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can…
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
J. G. Gluschke, J. Seidl, R. W. Lyttleton +5
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of pary…