28 citations · 28 across the 1 of their papers we have counts for
4 papers
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
J. G. Gluschke, J. Seidl, H. H. Tan +3
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characteri…
Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
J. Seidl, J. G. Gluschke, X. Yuan +6
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can…
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
J. G. Gluschke, J. Seidl, R. W. Lyttleton +5
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of pary…