65 citations · 126 across the 4 of their papers we have counts for
4 papers · 1 filter
All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality
Keigo Nakamura, Naoka Nagamura, Keiji Ueno +3
Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at r…
Micrometer-scale monolayer SnS growth by physical vapor deposition
H. Kawamoto, N. Higashitarumizu, N. Nagamura +4
Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resu…
Topological effects of three-dimensional porous graphene on Dirac quasiparticles
Takuya Okamoto, Yoshikazu Ito, Naoka Nagamura +3
This paper reports on the topological effects of three-dimensional (3D) porous graphene with tunable pore sizes and a preserved 2D graphene system of Dirac quasiparticles on its el…
Influence of interface dipole layers on the performance of graphene field effect transistors
Naoka Nagamura, Hirokazu Fukidome, Kosuke Nagashio +8
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensi…