13 citations · 20 across the 10 of their papers we have counts for
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Homogeneous All-Inorganic Perovskite Films via High-Pressure Recrystallization
Asma Miled, Trong Tam Nguyen, Anh Vui Nguyen +13
Metal halide perovskites are promising materials for optoelectronic applications owing to their outstanding optical and electronic properties. Among them, all-inorganic perovskites…
Wetting of Ga droplets in SiO/Si cavities: Application to self-assisted GaAs nanowire growth
Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4
In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…
Hexagonal germanium grown by molecular beam epitaxy on self-assisted GaAs nanowires
I. Dudko, T. Dursap, A. D. Lamirand +8
Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the f…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Crystal phase engineering of self-catalyzed GaAs nanowires using RHEED diagram
T. Dursap, M. Vettori, A. Danescu +5
It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III…
Early stages of GaAs nanowires VLS self-catalyzed growth on silica-terminated silicon substrate: A photoemission study
Louise Fouquat, Marco Vettori, Claude Botella +3
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs nanowires on epi-ready Si substrates by Molecular Beam Epitaxy (MBE) are studied. The i…