13 citations · 20 across the 10 of their papers we have counts for
10 papers
Photo-induced Wavelength-tuning of Telecom-band Quantum Dot Nanowires Embedded in a Phase Change Material
Evangelos Sotiropoulos, Philippe Regreny, Matthieu Bugnet +4
Scalable quantum-photonic technologies require spatially separated emitters to emit at the same wavelength, yet epitaxially grown quantum dots naturally exhibit emitter-to-emitter…
Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires
Elise Bailly-Rioufreyt, Zoya Polshchykova, Grégoire Saerens +10
Quantum entanglement is a fundamental resource for emerging quantum technologies, enabling secure communication and enhanced sensing. For decades, generating polarization entangled…
Homogeneous All-Inorganic Perovskite Films via High-Pressure Recrystallization
Asma Miled, Trong Tam Nguyen, Anh Vui Nguyen +13
Metal halide perovskites are promising materials for optoelectronic applications owing to their outstanding optical and electronic properties. Among them, all-inorganic perovskites…
Wetting of Ga droplets in SiO/Si cavities: Application to self-assisted GaAs nanowire growth
Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4
In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…
Hexagonal germanium grown by molecular beam epitaxy on self-assisted GaAs nanowires
I. Dudko, T. Dursap, A. D. Lamirand +8
Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the f…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Crystal phase engineering of self-catalyzed GaAs nanowires using RHEED diagram
T. Dursap, M. Vettori, A. Danescu +5
It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III…
Early stages of GaAs nanowires VLS self-catalyzed growth on silica-terminated silicon substrate: A photoemission study
Louise Fouquat, Marco Vettori, Claude Botella +3
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs nanowires on epi-ready Si substrates by Molecular Beam Epitaxy (MBE) are studied. The i…
Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)
Marco Vettori, Alexandre Danescu, Xin Guan +3
In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam ep…
Multiphase mean curvature flows with high mobility contrasts: a phase-field approach, with applications to nanowires
Elie Bretin, Alexandre Danescu, José Penuelas +1
The structure of many multiphase systems is governed by an energy that penalizes the area of interfaces between phases weighted by surface tension coefficients. However, interface…