M. Vettori

activity

20192022

most citedImpact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

6 citations · 7 across the 6 of their papers we have counts for

collaborators

Showing 2022Show all

2 papers · 1 filter

cond-mat.mtrl-sci2022

Wetting of Ga droplets in SiO $_{2}$ /Si cavities: Application to self-assisted GaAs nanowire growth

Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4

In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…

cond-mat.mtrl-sci2022

Growth-related formation mechanism of I $_{3}$ -type basal stacking fault in epitaxially grown hexagonal Ge-2H

Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6

The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…

Wetting of Ga droplets in SiO2​/Si cavities: Application to self-assisted GaAs nanowire growth

Growth-related formation mechanism of I3​-type basal stacking fault in epitaxially grown hexagonal Ge-2H

Wetting of Ga droplets in SiO $_{2}$ /Si cavities: Application to self-assisted GaAs nanowire growth

Growth-related formation mechanism of I $_{3}$ -type basal stacking fault in epitaxially grown hexagonal Ge-2H