6 citations · 7 across the 6 of their papers we have counts for
6 papers
Wetting of Ga droplets in SiO/Si cavities: Application to self-assisted GaAs nanowire growth
Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4
In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Crystal phase engineering of self-catalyzed GaAs nanowires using RHEED diagram
T. Dursap, M. Vettori, A. Danescu +5
It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III…
Early stages of GaAs nanowires VLS self-catalyzed growth on silica-terminated silicon substrate: A photoemission study
Louise Fouquat, Marco Vettori, Claude Botella +3
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs nanowires on epi-ready Si substrates by Molecular Beam Epitaxy (MBE) are studied. The i…
Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)
Marco Vettori, Alexandre Danescu, Xin Guan +3
In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam ep…