activity
20032023
most citedObservation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor

1.6k citations · 7.4k across the 52 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2019★ 92 cited

Spin-split band hybridization in graphene proximitized with -RuCl nanosheets

Soudabeh Mashhadi, Youngwook Kim, Jeongwoo Kim +8

Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromag…

cond-mat.mtrl-sci2019★ 76 cited

Reliable postprocessing improvement of van der Waals heterostructures

Youngwook Kim, Patrick Herlinger, Takashi Taniguchi +2

The successful assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has truly been a game chang…

cond-mat.mtrl-sci2010★ 186 cited

Raman Scattering at Pure Graphene Zigzag Edges

Benjamin Krauss, Péter Nemes-Incze, Viera Skakalova +3

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to di…

cond-mat.mtrl-sci2010★ 2 cited

Charged defects in graphene and the ionicity of hexagonal boron nitride in direct images

Jannik C. Meyer, Simon Kurasch, Hye Jin Park +10

We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmiss…

cond-mat.mtrl-sci2010★ 242 cited

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Isabella Gierz, Takayuki Suzuki, Dong Su Lee +7

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility conside…

cond-mat.mtrl-sci2009★ 416 cited

Band structure engineering of epitaxial graphene on SiC by molecular doping

Camilla Coletti, Christian Riedl, Dong Su Lee +5

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…