6 citations · 9 across the 3 of their papers we have counts for
4 papers
Electronic and magnetic properties of -FeGe films embedded in vertical spin valve devices
Dietmar Czubak, Samuel Gaucher, Lars Oppermann +5
We studied metastable -FeGe, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic FeSi and CoFeSi electrodes.…
Ordered structure of FeGe formed during solid-phase epitaxy
B Jenichen, M Hanke, S Gaucher +7
FeSi/Ge(Fe,Si)/FeSi thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on FeSi). The stacks were analyzed using el…
Ferromagnet/Semiconductor/Ferromagnet Hybrid Trilayers grown using solid phase epitaxy
Samuel Gaucher, Bernd Jenichen, Jens Herfort
The direct growth of semiconductors over metals by molecular beam epitaxy is a difficult task due to the large differences in crystallization energy between these types of material…
Mechanical Flip-Chip for Ultra-High Electron Mobility Devices
K. Bennaceur, B. A. Schmidt, S. Gaucher +6
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in sel…