475 citations · 1.1k across the 23 of their papers we have counts for
8 papers · 1 filter
Impact of Magnetic Coupling and Density on STT-MRAM Performance
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil +3
As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytical…
Fanout of 2 Triangle Shape Spin Wave Logic Gates
Abdulqader Mahmoud, Frederic Vanderveken, Florin Ciubotaru +3
Having multi-output logic gates saves much energy because the same structure can be used to feed multiple inputs of next stage gates simultaneously. This paper proposes novel trian…
2-input 4-output Programmable Spin Wave Logic Gate
Abdulqader Mahmoud, Frederic Vanderveken, Christoph Adelmann +3
To bring Spin Wave (SW) based computing paradigm into practice and develop ultra low power Magnonic circuits and computation platforms, one needs basic logic gates that operate and…
Multi-frequency Data Parallel Spin Wave Logic Gates
Abdulqader Mahmoud, Frederic Vanderveken, Christoph Adelmann +3
By their very nature, Spin Waves (SWs) with different frequencies can propagate through the same waveguide without affecting each other, while only interfering with their own speci…
An Introduction to Spin Wave Computing
Abdulqader Mahmoud, Florin Ciubotaru, Frederic Vanderveken +4
This paper provides a tutorial overview over recent vigorous efforts to develop computing systems based on spin waves instead of charges and voltages. Spin-wave computing can be co…
Spin Wave Normalization Towards all Magnonic Circuits
Abdulqader Mahmoud, Frederic Vanderveken, Christoph Adelmann +3
The key enabling factor for Spin Wave (SW) technology utilization for building ultra low power circuits is the ability to energy efficiently cascade SW basic computation blocks. SW…
Public-Key Based Authentication Architecture for IoT Devices Using PUF
Haji Akhundov, Erik van der Sluis, Said Hamdioui +1
Nowadays, Internet of Things (IoT) is a trending topic in the computing world. Notably, IoT devices have strict design requirements and are often referred to as constrained devices…
Survey on STT-MRAM Testing: Failure Mechanisms, Fault Models, and Tests
Lizhou Wu, Mottaqiallah Taouil, Siddharth Rao +2
As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research atten…