6 citations · 6 across the 3 of their papers we have counts for
7 papers
Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles
Péter Udvarhelyi
Bond reconstruction in vacancy-related structures affects their formation energies, symmetries, and electronic and optical properties. Using density functional theory, we investiga…
First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon
Péter Udvarhelyi, Péter Udvarhelyi
Spin-active color centers are the basis of solid-state defect systems utilized in quantum technologies. Although silicon is an emerging host material for quantum defects, there is…
Quantum communication networks with defects in silicon carbide
Philipp Sohr, Philipp Koller, Sebastian Ecker +23
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…
Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
Péter Udvarhelyi, Prineha Narang
Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic…
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Johannes Aberl, Enrique Prado Navarrete, Merve Karaman +12
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC…
Precise characterization of a silicon carbide waveguide fiber interface
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…