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Local strain engineering in atomically thin MoS2
Andres Castellanos-Gomez, Rafael Roldán, Emmanuele Cappelluti +4
Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using l…
Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS
E. Cappelluti, R. Roldán, J. A. Silva-Guillén +2
In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS and similar transition metal dichalcogenides. We sh…
Tunable Infrared Phonon Anomalies in Trilayer Graphene
Chun Hung Lui, Emmanuele Cappelluti, Zhiqiang Li +1
Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying a…
Interactions and superconductivity in heavily doped MoS2
R. Roldan, E. Cappelluti, F. Guinea
We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS. We show how the combination of the valley structure of the…