Hongping Zhao

collaborators

5 papers

cond-mat.mtrl-sci2026

Enhancement-Mode Vertical $β$ -Ga $_{2}$ O $_{3}$ U-Trench MOSFET with MOCVD Regrown n $^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Walid Amir, Jiawei Liu, Surajit Chakraborty +4

In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n $^{+}$ layers is demonstrated for enhancement-mode vertical $β$ -Ga $_{2}$ O $_{3}$ U…

physics.app-ph2025

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ )$_…

cond-mat.mtrl-sci2025

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5

Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…

cond-mat.mtrl-sci2025

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2

The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al $_{2}$ O $_{3}$ dielectrics on $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ films is investigated as a fun…

cond-mat.mtrl-sci2025

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…

Enhancement-Mode Vertical β-Ga2​O3​ U-Trench MOSFET with MOCVD Regrown n+ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/I^2-Ga2​O3​ and Al2​O3​/I^2-(Alx​Ga1−x​)2​O3​ MOSCAPs

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

In-situ MOCVD Growth and Band Offsets of Al2​O3​ Dielectric on I^2-Ga2​O3​ and I^2-(Alx​Ga1−x​)2​O3​ thin films

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Enhancement-Mode Vertical $β$ -Ga $_{2}$ O $_{3}$ U-Trench MOSFET with MOCVD Regrown n $^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films