activity
19992023
most citedA rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films

593 citations · 6.4k across the 95 of their papers we have counts for

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Showing 2020Show all

6 papers · 1 filter

cond-mat.mtrl-sci2020★ 1 cited

Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order

Kayla X. Nguyen, Yi Jiang, Michael C. Cao +13

Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous top…

cond-mat.mtrl-sci2020

Perturbative approach to electrocaloric effects

Mónica Graf, Jorge Íñiguez

We show that the electrocaloric (EC) effect -- e.g., the temperature change experienced by an insulator upon application of an electric bias -- lends itself to a straightforward in…

cond-mat.mtrl-sci2020★ 60 cited

Ferroelectricity in epitaxially strained rhombohedral ZrO2 thin films

J. P. B. Silva, R. F. Negrea, M. C. Istrate +7

Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the d…

cond-mat.mtrl-sci2020★ 16 cited

A three-order-parameter bistable magnetoelectric multiferroic metal

Andrea Urru, Francesco Ricci, Alessio Filippetti +2

Using first-principles calculations we predict that the layered-perovskite metal BiMnO is a ferromagnet, ferroelectric, and ferrotoroid which may realize the long so…

cond-mat.mtrl-sci2020★ 3 cited

Antiferroelectricity in a family of pyroxene-like oxides with rich polymorphism

Hugo Aramberri, Jorge Íñiguez

Antiferroelectrics have potential applications in energy conversion and storage, but are scarce, particularly among oxides that otherwise display rich ferroic behaviours. Are we ov…

cond-mat.mtrl-sci2020★ 29 cited

Effect of dopant ordering on the stability of ferroelectric hafnia

Sangita Dutta, Hugo Aramberri, Tony Schenk +1

Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance f…