1 citations · 1 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2025
Channel-last gate-all-around nanosheet oxide semiconductor transistors
Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron +18
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performa…
cond-mat.mtrl-sci2025★ 1 cited
High-current p-type transistors from precursor-engineered synthetic monolayer WSe
Anh Tuan Hoang, Kathryn Neilson, Kaikui Xu +11
Monolayer tungsten diselenide (WSe) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabri…
cond-mat.mtrl-sci2025
Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping
Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7
Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…