F. Hellman

activity

20012007

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cond-mat.str-el2003

Variation of the density of states in amorphous GdSi at the metal-insulator transition

L. Bokacheva, W. Teizer, F. Hellman +1

We performed detailed conductivity and tunneling mesurements on the amorphous, magnetically doped material $α$ -Gd $_{x}$ Si $_{1 - x}$ (GdSi), which can be driven through the metal-insula…

cond-mat.str-el2001

Charge dynamics and metal-insulator transition in Si $_{1 - x}$ Gd $_{x}$ and Si $_{1 - x}$ Y $_{x}$ alloys

D. N. Basov, A. M. Bratkovsky, P. F. Henning +5

Carrier dynamics in amorphous a-Si $_{1 - x}$ RE $_{x}$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy.…

Variation of the density of states in amorphous GdSi at the metal-insulator transition

Charge dynamics and metal-insulator transition in Si1−x​Gdx​ and Si1−x​Yx​ alloys

Charge dynamics and metal-insulator transition in Si $_{1 - x}$ Gd $_{x}$ and Si $_{1 - x}$ Y $_{x}$ alloys