Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti +6

This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. Th…