39 citations · 170 across the 8 of their papers we have counts for
8 papers
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +7
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed dev…
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E. Schilirò, R. Lo Nigro, S. E. Panasci +5
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on…
Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN heterostructures
Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno +4
Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/com…
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs
Patrick Fiorenza, Filippo Giannazzo, Mario Saggio +1
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO/4H-SiC system over the whole 4H-SiC band gap. The tempe…