1 citations · 1 across the 3 of their papers we have counts for
3 papers
Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Binoy Krishna De, V. G. Sathe, Divya +5
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…
Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…
Optical control of in-plane domain configuration and domain wall motion in ferroelectric and ferroelastic
Vivek Dwij, Binoy Krishna De, Hemant Singh Kunwar +6
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration wi…