1 citations · 1 across the 8 of their papers we have counts for
8 papers
Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation
Divya Jangra, Binoy Krishna De, Mukesh Kumar Dasoundhi +13
A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrP…
Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si
Ajay Kumar, Asraful Haque, Shubham Kumar Parate +5
Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier of…
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2
Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…
Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering
Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…
Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3
Divya Jangra, Binoy Krishna De, Pragati Sharma +8
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, s…
Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Binoy Krishna De, V. G. Sathe, Divya +5
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…
Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…