402 citations · 602 across the 4 of their papers we have counts for
4 papers
STM characterization of the Si-P heterodimer
N. J. Curson, S. R. Schofield, M. Y. Simmons +3
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH) on Si(001), as a function of annealing temperature…
Atomically precise placement of single dopants in Si
S. R. Schofield, N. J. Curson, M. Y. Simmons +4
We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study…
Measurement of phosphorus segregation in silicon at the atomic-scale using STM
Lars Oberbeck, Neil J. Curson, Toby Hallam +3
In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the…
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
L. Oberbeck, N. J. Curson, M. Y. Simmons +4
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectromet…