51 citations · 116 across the 7 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 51 cited
Carbon Ejection from a SiO2/SiC(0001) Interface by Annealing in High-Purity Ar
Takuma Kobayashi, Tsunenobu Kimoto
We found that carbon-associated byproducts formed at the dry-oxidized SiO2/SiC(0001) interface could be decomposed and be taken out to the SiO2 side by high-purity Ar annealing. We…
cond-mat.mtrl-sci2017★ 4 cited
Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry
Takuma Kobayashi, Yu-ichiro Matsushita, Takafumi Okuda +2
We report first-principles static and dynamic calculations that clarify the microscopic mechanism of carbon annihilation due to phosphorous treatment upon oxidation of silicon carb…