51 citations · 116 across the 7 of their papers we have counts for
7 papers
Complementary junction field-effect transistor logic gate operational at 300C with 1.4 V supply voltage
Mitsuaki Kaneko, Masashi Nakajima, Qimin Jin +1
Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling…
Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations
Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto
We determined the interface state density () distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structur…
Influence of vacuum annealing on interface properties of SiC (0001) MOS structures
Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto
We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)…
Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
Takuma Kobayashi, Keita Tachiki, Koji Ito +1
We report that annealing in low-oxygen-partial-pressure (low-p) ambient is effective in reducing the interface state density (D) at a SiC (0001)/SiO…
Carbon Ejection from a SiO2/SiC(0001) Interface by Annealing in High-Purity Ar
Takuma Kobayashi, Tsunenobu Kimoto
We found that carbon-associated byproducts formed at the dry-oxidized SiO2/SiC(0001) interface could be decomposed and be taken out to the SiO2 side by high-purity Ar annealing. We…
Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry
Takuma Kobayashi, Yu-ichiro Matsushita, Takafumi Okuda +2
We report first-principles static and dynamic calculations that clarify the microscopic mechanism of carbon annihilation due to phosphorous treatment upon oxidation of silicon carb…
Characterization of Interface Traps in SiO/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy
Tetsuo Hatakeyama, Mitsuru Sometani, Yoshiyuki Yonezawa +3
The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the…