activity
20172021
most citedLarge thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

56 citations · 155 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2021★ 2 cited

Ultrahigh toughness polycrystalline ceramics without fading of strength

Koji Matsui, Kouhei Hosoi, Bin Feng +2

Zirconia ceramics have been known as a structural material with high fracture toughness and strength since Garvie et al. discovered phase transformation toughening in 1975 [1]. Alt…

cond-mat.mtrl-sci2019★ 1 cited

High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ~3000 S cm-1

Mian Wei, Anup V. Sanchela, Bin Feng +3

La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more…

cond-mat.mtrl-sci2018★ 23 cited

Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3

Anup V. Sanchela, Mian Wei, Joonhyuk Lee +6

Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoele…

cond-mat.mtrl-sci2018★ 56 cited

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Anup V. Sanchela, Mian Wei, Haruki Zensyo +6

We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated…

cond-mat.mtrl-sci2017

Atomic-Scale Structure Relaxation, Chemistry and Charge Distribution of Dislocation Cores in SrTiO3

Peng Gao, Ryo Ishikawa, Bin Feng +3

By using the state-of-the-art microscopy and spectroscopy in aberration-corrected scanning transmission electron microscopes, we determine the atomic arrangements, occupancy, eleme…

cond-mat.mtrl-sci2017★ 39 cited

Thermopower modulation clarification of the intrinsic effective mass in a transparent oxide semiconductor, BaSnO3

Anup V. Sanchela, Takaki Onozato, Bin Feng +2

Although there are so many reports on the carrier effective mass (m*) of a transparent oxide semiconductor BaSnO3, it is almost impossible to know the intrinsic m* value because th…

cond-mat.mtrl-sci2017★ 34 cited

Thermoelectric phase diagram of the SrTiO3-SrNbO3 solid solution system

Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi +4

Thermoelectric energy conversion - the exploitation of the Seebeck effect to convert waste heat into electricity - has attracted an increasing amount of research attention for ener…