25 citations · 113 across the 10 of their papers we have counts for
5 papers · 1 filter
First principle thermodynamic study of oxygen vacancy at metal/oxide interface
Guanchen Li, Eric Tea, Jianqiu Huang +1
The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining th…
Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study
Eric Tea, Celine Hin
In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene ele…
First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO_2 interface
Eric Tea, Jianqiu Huang, Celine Hin
The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation…
Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study
Eric Tea, Jianqiu Huang, Guanchen Li +1
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continu…
Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO interfaces
Jianqiu Huang, Eric Tea, Guanchen Li +1
The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide…