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Controlling spin current polarization through non-collinear antiferromagnetism
T. Nan, C. X. Quintela, J. Irwin +20
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry condition…
Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Phillip Dang, Zexuan Zhang, Joseph Casamento +6
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque fie…
Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75
Lijun Zhu, Lujun Zhu, Shengjie Shi +2
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, an…
Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory
Xiang Li, Phillip Dang, Joseph Casamento +8
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large…
Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films
Isaiah Gray, Gregory M. Stiehl, John T. Heron +5
Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because…
Local Photothermal Control of Phase Transitions for On-demand Room-temperature Rewritable Magnetic Patterning
Antonio B. Mei, Isaiah Gray, Yongjian Tang +6
The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns p…