activity
20172025
most citedHighly-Oriented Atomically Thin Ambipolar MoSe Grown by Molecular Beam Epitaxy

98 citations · 531 across the 27 of their papers we have counts for

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Showing 2024Show all

5 papers · 1 filter

cond-mat.mes-hall2024

Electrically-tunable ultra-flat bands and -electron magnetism in graphene nanoribbons

Ruize Ma, Nikita V. Tepliakov, Arash A. Mostofi +1

Atomically thin crystals hosting flat electronic bands have been recently identified as a rich playground for exploring and engineering strongly correlated phases. Yet, their varie…

cond-mat.mtrl-sci2024★ 1 cited

Accurate and efficient localized basis sets for two-dimensional materials

Daniel Bennett, Michele Pizzochero, Javier Junquera +1

First-principles density functional theory (DFT) codes which employ a localized basis offer advantages over those which use plane-wave bases, such as better scaling with system siz…

cond-mat.mtrl-sci2024

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Raagya Arora, Ariel R. Barr, Daniel T. Larson +2

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as…

cond-mat.mes-hall2024★ 15 cited

One-dimensional magnetic conduction channels across zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions

Michele Pizzochero, Nikita V. Tepliakov, Johannes Lischner +2

We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplo…

cond-mat.mtrl-sci2024★ 1 cited

2D Nitride Ordered Alloys: A Novel Class of Ultra-Wide Bandgap Semiconductors

Raagya Arora, Ariel R. Barr, Daniel Bennett +3

Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing…