activity
20102026
most citedMajorana bound states in a coupled quantum-dot hybrid-nanowire system

1.1k citations · 10.6k across the 112 of their papers we have counts for

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Showing 2016Show all

6 papers · 1 filter

cond-mat.mes-hall2016★ 114 cited

Transport signatures of quasiparticle poisoning in a Majorana island

S. M. Albrecht, E. B. Hansen, A. P. Higginbotham +7

We investigate effects of quasiparticle poisoning in a Majorana island with strong tunnel coupling to normal-metal leads. In addition to the main Coulomb blockade diamonds, "shadow…

cond-mat.mes-hall2016★ 132 cited

Microwave spectroscopy of spinful Andreev bound states in ballistic semiconductor Josephson junctions

David J. van Woerkom, Alex Proutski, Bernard van Heck +7

The superconducting proximity effect in semiconductor nanowires has recently enabled the study of new superconducting architectures, such as gate-tunable superconducting qubits and…

cond-mat.mes-hall2016★ 60 cited

Hybrid Double Quantum Dots: Normal, Superconducting, and Topological Regimes

D. Sherman, J. S. Yodh, S. M. Albrecht +3

Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard super…

cond-mat.mes-hall2016★ 103 cited

Topological Phases in InAsSb: From Novel Topological Semimetal to Majorana Wire

Georg W. Winkler, QuanSheng Wu, Matthias Troyer +2

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of t…

physics.optics2016★ 6 cited

Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

R. Tanta, M. H. Madsen, Z. Liao +4

The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This a…

cond-mat.mes-hall2016★ 17 cited

InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

M. Taupin, E. Mannila, P. Krogstrup +6

We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard…