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V. Askarpour

9 papers hereh-index 10385 citations33 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author5
  • last author1

Across the 8 of 9 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci5
  • cond-mat.mes-hall3
  • physics.app-ph1
same name
  • V. Askarpour — 1 paper, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20172023
most citedThermoelectric Band Engineering: The Role of Carrier Scattering

54 citations · 246 across the 9 of their papers we have counts for

collaborators
Showing 2022Show all

3 papers · 1 filter

cond-mat.mtrl-sci2022★ 18 cited

First-principles analysis of intravalley and intervalley electron-phonon scattering in thermoelectric materials

Vahid Askarpour, Jesse Maassen

Intervalley collisions, which scatter electrons from one valley or band to another, can be detrimental to thermoelectric performance in materials with multiple valleys/bands. In th…

physics.app-ph2022★ 41 cited

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current

Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…

cond-mat.mes-hall2022★ 34 cited

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Zehao Lin, Mengwei Si, Vahid Askarpour +12

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…

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