54 citations · 246 across the 9 of their papers we have counts for
9 papers
The - Transition in Solid Oxygen
Sabri F. Elatresh, V. Askarpour, S. A. Bonev
The structure of solid oxygen has been studied at pressures from 50 to 140~GPa using static structure search methods and molecular dynamics simulations with density functional theo…
First-principles analysis of intravalley and intervalley electron-phonon scattering in thermoelectric materials
Vahid Askarpour, Jesse Maassen
Intervalley collisions, which scatter electrons from one valley or band to another, can be detrimental to thermoelectric performance in materials with multiple valleys/bands. In th…
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
Impact of dimensional crossover on phonon transport in van der Waals materials: a case study of graphite and graphene
Patrick Strongman, Jesse Maassen
Using first-principles modeling, we investigate how phonon transport evolves in layered/van der Waals materials when going from 3D to 2D, or vice versa, by gradually pulling apart…
Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe
Vahid Askarpour, Jesse Maassen
In this study, we calculate the =300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeT…
Phonon transport across a Si-Ge interface: the role of inelastic bulk scattering
Jesse Maassen, Vahid Askarpour
Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-princ…
On the Calculation of Lorenz Numbers for Complex Thermoelectric Materials
Xufeng Wang, Vahid Askarpour, Jesse Maassen +1
A first-principles informed approach to the calculation of Lorenz numbers for complex thermoelectric materials is presented and discussed. Example calculations illustrate the impor…
Thermoelectric Band Engineering: The Role of Carrier Scattering
Evan Witkoske, Xufeng Wang, Vahid Askarpour +2
Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offse…