activity
20092021
most citedObservation of the 4-periodic Josephson effect in indium arsenide nanowires

137 citations · 368 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2021★ 1 cited

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

D. Chen, S. Cai, N. -W. Hsu +7

We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently uti…

cond-mat.mes-hall2019★ 11 cited

Broadband microwave spectroscopy of semiconductor nanowire-based Cooper-pair transistors

Alex Proutski, Dominique Laroche, Bas van 't Hooft +4

The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various superconducting quantum circuits…

cond-mat.mes-hall2017★ 137 cited

Observation of the 4-periodic Josephson effect in indium arsenide nanowires

Dominique Laroche, Daniël Bouman, David J. van Woerkom +9

Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of…

cond-mat.mtrl-sci2017★ 7 cited

Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices

E. Bussmann, John King Gamble, J. C. Koepke +9

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…

cond-mat.mes-hall2017★ 12 cited

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

T. M. Lu, L. A. Tracy, D. Laroche +5

Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices…

cond-mat.mes-hall2015★ 3 cited

Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

K. Bennaceur, B. A. Schmidt, S. Gaucher +6

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in sel…