61 citations · 162 across the 5 of their papers we have counts for
5 papers
Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
Nick Pant, Xuefeng Li, Elizabeth DeJong +3
III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. Using first-…
Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures
N. A. Sanford, P. T. Blanchard, M. D. Brubaker +6
Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compar…
Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4
We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…
MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures
Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…
Explanation of low efficiency droop in semipolar InGaN/GaN LEDs through evaluation of carrier recombination coefficients
Morteza Monavarian, Arman Rashidi, Andrew A. Aragon +4
We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak i…