activity
20142026
most citedRapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor

154 citations · 656 across the 23 of their papers we have counts for

collaborators
Showing 2016Show all

5 papers · 1 filter

cond-mat.mtrl-sci2016★ 18 cited

MBE growth of self-assisted InAs nanowires on graphene

Jung-Hyun Kang, Yuval Ronen, Yonatan Cohen +7

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphol…

cond-mat.mtrl-sci2016★ 42 cited

Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

Antonio Rossi, Holger Buech, Carmine Di Rienzo +7

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of…

physics.chem-ph2016★ 29 cited

Revealing the multi-bonding state between hydrogen and graphene-supported Ti clusters

Keisuke Takahashi, Shigehito Isobe, Kengo Omori +6

Hydrogen adsorption on graphene-supported metal clusters has brought much controversy due to the complex nature of the bonding between hydrogen and metal clusters. The bond types o…

cond-mat.mtrl-sci2016★ 51 cited

Rapid and catalyst-free CVD growth of graphene on hBN

Neeraj Mishra, Vaidotas Miseikis, Domenica Convertino +3

Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically fla…

cond-mat.mes-hall2016★ 7 cited

Efficient n-type Doping in Epitaxial Graphene through Strong Lateral Orbital Hybridization of Ti Adsorbate

Jhih-Wei Chen, Hao-Chun Huang, Domenica Convertino +10

In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spec…