164 citations · 715 across the 25 of their papers we have counts for
4 papers · 1 filter
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
Electrically tunable spin-orbit interaction in an InAs nanosheet
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer charac…
Plateau regions for zero-bias peaks within 5% of the quantized conductance value
Zhaoyu Wang, Huading Song, Dong Pan +13
Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected…
Large Andreev bound state zero bias peaks in a weakly dissipative environment
Zhichuan Wang, Shan Zhang, Dong Pan +14
We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks…