164 citations · 715 across the 25 of their papers we have counts for
5 papers · 1 filter
Large-composition-range pure-phase homogeneous InAsSb nanowires
Lianjun Wen, Dong Pan, Lei Liu +3
Narrow bandgap InAsSb nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors and quantum computation. Realizi…
Suppressing Andreev bound state zero bias peaks using a strongly dissipative lead
Shan Zhang, Zhichuan Wang, Dong Pan +14
Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not…
Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
Huading Song, Zitong Zhang, Dong Pan +11
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs na…
Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages
Jingwei Mu, Weijie Li, Shaoyun Huang +5
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to de…
Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu +7
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other pl…