78 citations · 232 across the 10 of their papers we have counts for
8 papers · 1 filter
kdotpy: theory on a lattice for simulating semiconductor band structures
Wouter Beugeling, Florian Bayer, Christian Berger +11
The software project kdotpy provides a Python application for simulating electronic band structures of semiconductor devices with theory on a lattice. T…
2024 roadmap on 2D topological insulators
Bent Weber, Michael S Fuhrer, Xian-Lei Sheng +22
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band struct…
Counterpropagating topological and quantum Hall edge channels
Saquib Shamim, Pragya Shekhar, Wouter Beugeling +7
The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau l…
Emergent quantum Hall effects below mT in a two-dimensional topological insulator
Saquib Shamim, Wouter Beugeling, Jan Böttcher +7
The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity…
Interacting topological edge channels
Jonas Strunz, Jonas Wiedenmann, Christoph Fleckenstein +10
Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin…
Quantum anomalous Hall effect in Mn doped HgTe quantum wells
A. Budewitz, K. Bendias, P. Leubner +5
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements re…
Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ-layers
Saquib Shamim, Suddhasatta Mahapatra, Craig Polley +2
We report low-frequency 1/f noise measurements of degenerately doped Si:P δ-layers at 4.2K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P syst…
Thermoelectric Properties of Electrostatically Tunable Antidot Lattices
Srijit Goswami, Christoph Siegert, Saquib Shamim +4
We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Ferm…