428 citations · 1.1k across the 17 of their papers we have counts for
4 papers · 1 filter
Single exciton trapping in an electrostatically defined 2D semiconductor quantum dot
Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Michael R. Koehler +5
Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applicatio…
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Fateme Mahdikhanysarvejahany, Daniel N. Shanks, Mathew Klein +8
Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moiré physics in tran…
Interlayer Exciton Diode and Transistor
Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Trevor G. Stanfill +6
Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs a…
Direct STM Measurements of R- and H-type Twisted MoSe2/WSe2 Heterostructures
Rachel Nieken, Anna Roche, Fateme Mahdikhanysarvejahany +6
When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the…