313 citations · 445 across the 9 of their papers we have counts for
5 papers · 1 filter
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
Seungheon Shin, Jonathan Pratt, Joe McGlone +5
We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap (UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction…
Design and Simulation of a III-Nitride Light Emitting Transistor
Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi +2
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping…
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7
The performance of ultra-wide band gap materials like -GaO is critically dependent on achieving high average electric fields within the active region o…
High electron density modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5
We report on the design and demonstration of modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…