52 citations · 90 across the 3 of their papers we have counts for
4 papers · 1 filter
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7
Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Z. Gacevic, M. Holmes, E. Chernysheva +9
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, s…
Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
E. Chernysheva, Z. Gacevic, N. Garcia-Lepetit +10
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations becau…
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Snezana Lazic, Ekaterina Chernysheva, Zarko Gacevic +10
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of soli…