52 citations · 119 across the 5 of their papers we have counts for
5 papers
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7
Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Z. Gacevic, M. Holmes, E. Chernysheva +9
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, s…
Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
E. Chernysheva, Z. Gacevic, N. Garcia-Lepetit +10
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations becau…
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Snezana Lazic, Ekaterina Chernysheva, Zarko Gacevic +10
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of soli…
Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)
M. Wiesner, W. -M. Schulz, C. Kessler +4
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applicatio…