121 citations · 151 across the 7 of their papers we have counts for
5 papers · 1 filter
Dielectric environment sensitivity of carbon centres in hexagonal boron nitride
Danis I. Badrtdinov, Carlos Rodriguez-Fernandez, Magdalena Grzeszczyk +11
A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrat…
Gate-tunable artificial nucleus in graphene
Mykola Telychko, Keian Noori, Hillol Biswas +12
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunabl…
Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities
Z. Qiu, K. Vaklinova, P. Huang +7
Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure s…
Electronic Self-passivation of Single Vacancy in Black Phosphorus via a Controlled Ionization
Hanyan Fang, Aurelio Gallardo, Dikshant Dulal +11
We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy a…
Defects controlled hole doping and multi-valley transport in SnSe single crystals
Zhen Wang, Congcong Fan, Zhixuan Shen +10
SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize…